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? irfr6215pbf IRFU6215PBF v dss -150v r ds(on) 0.295 ?? i d -13a 1 2016-5-31 ? absolute maximum ratings symbol parameter max. units i d @ t c = 25c continuous drain current, v gs @ -10v -13 ? i d @ t c = 100c continuous drain current, v gs @ -10v -9.0 a i dm pulsed drain current ?? -44 ? p d @t c = 25c maximum power dissipation 110 w linear derating factor 0.71 w/c v gs gate-to-source voltage 20 v t j operating junction and -55 to + 175 ? t stg storage temperature range c ? soldering temperature, for 10 seconds (1.6mm from case) 300 ? e as single pulse avalanche energy ?? 310 mj i ar avalanche current ?? -6.6 a e ar repetitive avalanche energy ?? 11 mj dv/dt peak diode recovery dv/dt ? 5.0 v/ns d- pak irfr6215pbf g d s gate drain source ? p-channel ? 175c operating temperature ? surface mount (irfr6215) ? straight lead (irfu6215) ? advanced process technology ? fast switching ? fully avalanche rated ? lead-free g i- pak IRFU6215PBF hexfet ? power mosfet base part number package type standard pack form quantity IRFU6215PBF i-pak tube 75 IRFU6215PBF irfr6215pbf d-pak tube 75 irfr6215pbf tape and reel left 3000 irfr6215trlpbf orderable part number s g d d s d description fifth generation hexfets from international rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. the d-pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. the straight lead version (irfu series) is for through-hole mounting applications. power dissipation levels up to 1.5 watts are possible in typical surface mount applications. thermal resistance ? symbol parameter typ. max. units r ? jc junction-to-case ??? 1.4 c/w r ? ja junction-to-ambient ( pcb mount) ? ??? 50 r ? ja junction-to-ambient ??? 110
? irfr/u6215pbf 2 2016-5-31 notes: ? ? repetitive rating; pulse width limited by max. junc tion temperature. (see fig.11) ? starting t j = 25c, l = 14mh, r g = 25 ? , i as = -6.6a.(see fig.12) ? i sd ?? -6.6a, di/dt ? -620a/s, v dd ? v (br)dss , t j ? 175c ? pulse width ?? 300s; duty cycle ? 2%. ? this is applied for i-pak, ls of d-pak is measur ed between lead and center of die contact. ?? uses irf6215 data and test conditions. ? ?? when mounted on 1" square pcb (fr-4 or g-10 material). fo r recommended footprint and soldering techniques refer to application note #an-994. electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage -150 ??? ??? v v gs = 0v, i d = -250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? -0.20 ??? v/c reference to 25c, i d = -1ma r ds(on) static drain-to-source on-resistance ??? ??? 0.295 ????? v gs = -10v, i d = -6.6a ? ??? ??? 0.58 v gs = -10v, i d = -6.6a ? t j =150c v gs(th) gate threshold voltage -2.0 ??? -4.0 v v ds = v gs , i d = -250a ? gfs forward trans conductance 3.6 ??? ??? s v ds = -50v, i d = -6.6a ? i dss drain-to-source leakage current ??? ??? -25 a v ds = -150v, v gs = 0v ??? ??? -250 v ds = -120v,v gs = 0v,t j =150c i gss gate-to-source forwar d leakage ??? ??? -100 na v gs = -20v gate-to-source reverse leakage ??? 100 v gs = 20v q g total gate charge ??? ??? 66 nc ? i d = -6.6a q gs gate-to-source charge ??? ??? 8.1 v ds = -120v q gd gate-to-drain charge ??? ??? 35 v gs = -10v, see fig. 6 and 13 ?? t d(on) turn-on delay time ??? 14 ??? ns v dd = -75v t r rise time ??? 36 ??? i d = -6.6a t d(off) turn-off delay time ??? 53 ??? r g = 6.8 ? t f fall time ??? 37 ??? r d = 12 ??? see fig. 10 ?? l d internal drain inductance ??? 4.5 ??? nh between lead ,6mm (0.25in.) l s internal source inductance ??? 7.5 ??? from package and center of die contact ? c iss input capacitance ??? 860 ??? ? v gs = 0v c oss output capacitance ??? 220 ??? pf ? v ds = -25v c rss reverse transfer capacitance ??? 130 ??? ? ? = 1.0mhz,see fig. 5 ? source-drain ratings and characteristics parameter min. typ. max. units conditions i s continuous source current ??? ??? -13 a mosfet symbol (body diode) showing the i sm pulsed source current ??? ??? -44 integral reverse (body diode) ???? p-n junction diode. v sd diode forward voltage ??? ??? -1.6 v t j = 25c,i s = -6.6a,v gs = 0v ?? t rr reverse recovery time ??? 160 240 ns t j = 25c ,i f = -6.6a q rr reverse recovery charge ??? 1.2 1.7 ? c di/dt = 100a/s ??? t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d )
? irfr/u6215pbf 3 2016-5-31 fig. 2 typical output characteristics fig. 3 typical transfer characteristics fig. 4 normalized on-resistance vs. temperature fig. 1 typical output characteristics 1 10 100 110100 d ds 20s pulse width t = 25c c a -i , drain-to-source current (a) -v , drain-to-source voltage (v) vgs top - 15v - 10v - 8.0v - 7.0v - 6.0v - 5.5v - 5.0v bottom - 4.5v -4.5v 1 10 100 110100 d ds a -i , drain-to-source current (a) -v , drain-to-source voltage (v) vgs top - 15v - 10v - 8.0v - 7.0v - 6.0v - 5.5v - 5.0v bottom - 4.5v -4.5v 20s pulse width t = 175c c 1 10 100 45678910 t = 25c j gs d a -i , drain-to-source current (a) -v , gate-to-source voltage (v) t = 175c j v = -50v 20s pulse width ds 0.0 0.5 1.0 1.5 2.0 2.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 j t , junction temperature (c) r , drain-to-source on resistance ds(on) (normalized) a v = -10v gs i = -11a d
? irfr/u6215pbf 4 2016-5-31 fig 5. typical capacitance vs. drain-to-source voltage ? fig 8. maximum safe operating area fig. 7 typical source-to-drain diode forward voltage fig 6. typical gate charge vs. gate-to-source voltage 0 400 800 1200 1600 2000 110100 c, capacitance (pf) a ds -v , drain-to-source voltage (v) v = 0v, f = 1mhz c = c + c , c shorted c = c c = c + c gs iss gs gd ds rss gd oss ds gd c iss c oss c rss 0 4 8 12 16 20 020406080 g gs a -v , gate-to-source voltage (v) q , total gate charge (nc) for test circuit see figure 13 i = -6.6a v = -120v v = -75v v = -30v d ds ds ds 0.1 1 10 100 0.2 0.6 1.0 1.4 1.8 t = 25c j v = 0v gs sd sd a -i , reverse drain current (a) -v , source-to-drain voltage (v) t = 175c j 1 10 100 1 10 100 1000 operation in this area limited by r ds(on) 10ms a -i , drain current (a) -v , drain-to-source voltage (v) ds d 10s 100s 1ms t = 25c t = 175c single pulse c j
? irfr/u6215pbf 5 2016-5-31 fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 25 50 75 100 125 150 175 0 2 4 6 8 10 12 14 t , case temperature ( c) -i , drain current (a) c d fig 10a. switching time test circuit fig 10b. switching time waveforms 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 t , rectangular pulse duration (sec) 1 thjc d = 0.50 0.01 0.02 0.05 0.10 0.20 single pulse (thermal response) a thermal response (z ) p t 2 1 t dm notes: ? 1. duty factor d = t / t 2. peak t = p x z + t ??? ? 1 2 j dm thjc c ?? ?
? irfr/u6215pbf 6 2016-5-31 ? fig 12a. unclamped inductive test circuit fig 12b. unclamped inductive waveforms fig 13b. gate charge test circuit fig 13a. gate charge waveform fig 12c. maximum avalanche energy vs. drain current 0 200 400 600 800 25 50 75 100 125 150 175 j e , single pulse avalanche energy (mj) as a starting t , junction temperature (c) i top -2.7a -4.7a bottom -6.6a d
? irfr/u6215pbf 7 2016-5-31 ? fig 14. peak diode recovery dv/dt test circuit for n-channel hexfet? power mosfets
? irfr/u6215pbf 8 2016-5-31 ? note: for the most current drawing please refer to infineon?s web site www.infineon.com d-pak (to-252aa) part marking information d-pak (to-252aa) package outline (dimensions are shown in millimeters (inches)) international assembled on ww 16, 2001 in the assembly line "a" or note: "p" in assembly line position example: lot code 1234 this is an irfr120 with assembly indicates "lead-free" product (optional) p = designates lead-free a = assembly site code part number week 16 date code year 1 = 2001 rectifier international logo lot code assembly 3412 irfr120 116a line a 34 rectifier logo irfr120 12 assembly lot code year 1 = 2001 date code part number week 16 "p" in assembly line position indicates "lead-free" qualification to the consumer-level p = designates lead-free product qualified to the consumer level (optional)
? irfr/u6215pbf 9 2016-5-31 i-pak (to-251aa) package outline dimensions are shown in millimeters (inches) i-pak (to-251aa) part marking information 78 line a logo international rectifier or product (optional) p = designates lead-free a = assembly site code irfu120 part number week 19 date code year 1 = 2001 rectifier international logo assembly lot code irfu120 56 date code part number lot code assembly 56 78 year 1 = 2001 week 19 119a indicates lead-free" assembled on ww 19, 2001 in the assembly line "a" note: "p" in assembly line position example: with assembly this is an irfu120 lot code 5678 note: for the most current drawing please refer to infineon?s web site www.infineon.com
? irfr/u6215pbf 10 2016-5-31 note: for the most current drawing please refer to infineon?s web site www.infineon.com tr 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) 12.1 ( .476 ) 11.9 ( .469 ) feed direction feed direction 16.3 ( .641 ) 15.7 ( .619 ) trr trl notes : 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters ( inches ). 3. outline conforms to eia-481 & eia-541. notes : 1. outline conforms to eia-481. 16 mm 13 inch d-pak (to-252aa) tape & reel information dimensions ar e shown in millimeters (inches)
? irfr/u6215pbf 11 2016-5-31 ? revision history date comments 5/31/2016 ?? updated datasheet with corporate template. ?? added disclaimer on last page. qualification information ? ? qualification level ? industrial (per jedec jesd47f) ?? d-pak msl1 i-pak (per jedec j-std-020d) ?? rohs compliant yes moisture sensitivity level ? qualification standards can be found at in neon?s ? web ? site? www.in neon.com ?? applicable version of jedec standar d at the time of product release. trademarks ? of ? in neon ? technologies ? ag ? hvic?, ? ipm?, ? pfc?, ? au \ convertir?, ? aurix?, ? c166?, ? canpak?, ? cipos?, ? cipurse?, ? cooldp?, ? coolgan?, ? coolir?, ? coolmos?, ? coolset?, ? coolsic?, ? dave?, ? di \ pol?, ? directfet?, ? drblade?, ? easypim?, ? econobridge?, ? econodual?, ? econopack?, ? econopim?, ? eicedriver?, ? eupec?, ? fcos?, ? ganpowir?, ? hexfet?, ? hitfet?, ? hybridpack?, ? imotion?, ? iram?, ? isoface?, ? isopack?, ? ledrivir?, ? litix?, ? mipaq?, ? modstack?, ? my\ d?, ? novalithic?, ? optiga?, ? op mos?, ? origa?, ? powiraudio?, ? powirstage?, ? primepack?, ? pr imestack?, ? profet?, ? pro \ sil?, ? rasic?, ? real3?, ? smar tlewis ?, ? solid ? flash?, ? spoc?, ? strongirfet?, ? supirbuck?, ? tempfet?,? trenchstop?, ? tricore?, ? uhvic?, ? xhp?, ? xmc? ? ? trademarks ? updated ? november ? 2015 ? ? other ?trademarks ? all ? referenced ? product ? or ? service ? names ? and ? trademarks ? are ? the ? property ? of ? their ? respec ve ? owners. ? ?edi on ? 2016 \ 04 \ 19? published ? by ? in neon ?technologies ?ag ? 81726 ? munich, ? germany ? ?? ? ? 2016 ?in neon ? technologies ?ag.? all ?rights ? reserved. ? ?? do ?you ? have ?a ? ques on ? about ?this ? document? ? email: ? erratum@in neon.com ? ? document ? reference ? ifx1 ? important ? notice ? the ? informa on ?given ?in ?this ?document ?shall ?in ? no ? event ?be ? reg a rd ed ?as ?a ?guarantee ?of ? condi ons ? or ? characteris cs ?? (?bescha ? enheitsgaran e?) ?. ? ?? with ? respect ? to ? any ? examples, ? hints ? or ? any ? typical ? values ? stated ? herein ? and/or ? any ? informa on ? regarding ? the ? applica on ? of ? the ? product, ? in neon ? technologies ? hereby ? disclaims ? any ? and? all ? warran es ? and ? liabili es ? of ? any ? kind, ? including ? without ? lim ita on ? war ran es ? of ? non \ infringement ? of ? intellectual ?property ? rights ?of ?any ? third ?party. ? ?? in ? addi on, ? any ? informa on ? given? in ? this ? document ? is ? subject ? to ? customer?s ? compliance ? with ? its ? obliga ons ? stated ? in ? this ? document ? and? any ? applicable ? legal ? requirements, ? norms ? and ? standards? conce r n ing ? customer?s ? products ? and ? any ? use ? of ? the ? product ? of ? in neon ? technologies ? in ? customer?s ? applica ons. ? ?? the ? data ? contained ? in ? this ? document ? is ? exclusively ? intended ? for ? technically ? trained ? sta? . ? it ? is ? the ? responsibility ?of ? customer?s ? technical ? departments ? to ? evaluate ? the ? suitability ? of ? the ? product ? for ? the ? intended ? applic a on ? and ? the ? completeness ? of ? the ? product ? informa on ? given? in ? this ? document ? with ? respect ?to ?such ? applicaon. ? ?? for ? further ? informa on ? on ? the ? product, ? technology, ? delivery ? terms ? and ? condi ons ? and ? prices ? please ? contact ? your ? nearest ? in neon ? technologies ? o ? ce? ( www.in neon.com ). ? ? ?please ? note ? that ? this ? product ? is ? not ? quali ed ? accordi n g ? to ? the ? ae c ? q100 ? or ? aec ? q101 ? documents ? of ?the ?automo ve ? electronics ? council. ?? warnings ? ?due ? to ? technical ? requirements ? products ? may ? contain ? dangerous ? substances. ? for ? informa on ? on ? the ? types ? in ? ques on ? please ? contact ? your ? nearest ? in neon ? technologies?o ? ce . ?? ? except ? as ? otherwise ? explic itly ? approved ? by ? in neon ? technologies ? in ? a ? wri en ? do cument ? signed ? by ? authorized ? representa ves? of ? in neon ? technologies, ? in neon ? technologies? ? products ? may ? not ? be ? used ? in ? any ? applica ons ? where ? a ? failure ? of ? the ? product ? or ? any ? consequences ? of ? the ? use ? thereof ? can ? reasonably ? be ?expected ?to ?re sult ? in ? personal ? injury. ?? ?? ?? ??

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